SILICON SURFACE IMPERFECTION PROBED WITH A NOVEL X-RAY-DIFFRACTION TECHNIQUE AND ITS INFLUENCE ON THE RELIABILITY OF THERMALLY GROWN SILICON-OXIDE

被引：6

作者：

KITANO, T ^{[1
]}

HASEGAWA, E ^{[1
]}

TSUKIJI, M ^{[1
]}

AKIMOTO, K ^{[1
]}

KIMURA, S ^{[1
]}

SAITO, S ^{[1
]}

IKEDA, K ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 11A期

关键词：

SILICON; SURFACE IMPERFECTION; SURFACE ROUGHNESS; TDDB CHARACTERISTICS; SACRIFICIAL OXIDATION; TUNABILITY OF SYNCHROTRON RADIATION; ASYMMETRIC REFLECTION AND SPECULAR REFLECTION;

D O I：

10.1143/JJAP.32.L1581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon surface imperfection was investigated by an X-ray diffraction technique under the condition of simultaneous specular and Bragg reflections, using the tunability of synchrotron radiation in conjunction with an asymmetric reflection. The surface roughness was the main imperfection on the conventional mechanochemical polished silicon wafer, and this surface imperfection was reduced by a series of sacrificial oxidation procedures. The time-dependent dielectric breakdown (TDDB) characteristics were also improved by these procedures. In this way, the reliability of the metal oxide semiconductor capacitor was dependent on the surface imperfection of the silicon substrate.

引用

页码：L1581 / L1583

页数：3

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