THEORY OF THE CURRENT-FIELD RELATION IN SILICON-RICH SILICON DIOXIDE

被引：10

作者：

RON, A ^{[1
]}

DIMARIA, DJ ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.30.807

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：807 / 812

页数：6

共 19 条

[1]

ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431

[2] HOPPING CONDUCTIVITY IN DISORDERED SYSTEMS [J].

AMBEGAOKAR, V ;

HALPERIN, BI ;

LANGER, JS .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08) :2612-+

[3] TEMPERATURE-DEPENDENCE AND FIELD-DEPENDENCE OF HOPPING CONDUCTION IN DISORDERED SYSTEMS .2. [J].

APSLEY, N ;

HUGHES, HP .

PHILOSOPHICAL MAGAZINE, 1975, 31 (06) :1327-1339

[4] TEMPERATURE-DEPENDENCE AND FIELD-DEPENDENCE OF HOPPING CONDUCTION IN DISORDERED SYSTEMS [J].

APSLEY, N ;

HUGHES, HP .

PHILOSOPHICAL MAGAZINE, 1974, 30 (05) :963-972

[5] QUANTUM WELL MODEL OF HYDROGENATED AMORPHOUS-SILICON [J].

BRODSKY, MH .

SOLID STATE COMMUNICATIONS, 1980, 36 (01) :55-59

[6] CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS [J].

DIMARIA, DJ ;

DONG, DW ;

FALCONY, C ;

THEIS, TN ;

KIRTLEY, JR ;

TSANG, JC ;

YOUNG, DR ;

PESAVENTO, FL ;

BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5801-5827

[7] EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIES [J].

DIMARIA, DJ ;

DONG, DW ;

FALCONY, C ;

BRORSON, SR .

ELECTRON DEVICE LETTERS, 1982, 3 (07) :191-195

[8]

DIMARIA DJ, 1980, PHYSICS MOS INSULATO, P1

[9] 2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J].

GINOVKER, AS ;

GRITSENKO, VA ;

SINITSA, SP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :489-495

[10] HOPPING CONDUCTION IN AMORPHOUS SOLIDS [J].

HILL, RM .

PHILOSOPHICAL MAGAZINE, 1971, 24 (192) :1307-&

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