CHARACTERIZATION OF THE INTERFACE BETWEEN GAAS-CR SUBSTRATES AND N-TYPE EPITAXIAL GAAS-LAYERS BY INFRARED MULTIPLE INTERFERENCE ANALYSIS

被引：4

作者：

NOWAK, U

SAALMULLER, J

RICHTER, W

HEYEN, M

JANZ, H

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER

[2] UNIV ULM,FESTKORPERPHYS ABT,D-7900 ULM,FED REP GER

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 35卷 / 01期

关键词：

D O I：

10.1007/BF00620296

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：27 / 34

页数：8

共 18 条

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[8] MODELING OF SULFUR INCORPORATION DURING LOW-PRESSURE CVD OF GAAS(100) IN THE GA-HCL-ASH3-H2-H2S SYSTEM [J].

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