ANNEALING BEHAVIOR OF C-IMPLANTED, N-IMPLANTED, MG-IMPLANTED, AL-IMPLANTED AND P-IMPLANTED SI AND GE

被引：9

作者：

RAISANEN, J

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1007/BF00614909

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：87 / 93

页数：7

共 23 条

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