A NEW EXPERIMENTAL-DETERMINATION OF THE RELATIONSHIP BETWEEN THE HALL-MOBILITY AND THE HOLE CONCENTRATION IN HEAVILY DOPED P-TYPE SILICON

被引：56

作者：

SASAKI, Y

ITOH, K

INOUE, E

KISHI, S

MITSUISHI, T

机构：

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 01期

关键词：

D O I：

10.1016/0038-1101(88)90079-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：5 / 12

页数：8

共 18 条

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