CALCULATION OF SURFACE GENERATION AND RECOMBINATION VELOCITIES AT THE SI-SIO2 INTERFACE

被引：156

作者：

EADES, WD

SWANSON, RM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.335562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4267 / 4276

页数：10

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