ABRUPT MG DOPING PROFILES IN GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：10

作者：

LANDGREN, G

RASK, M

ANDERSSON, SG

LUNDBERG, A

机构：

[1] Swedish Inst of Microelectronics, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Crystals--Epitaxial Growth - Magnesium and Alloys - Transistors; Bipolar--Heterojunctions;

D O I：

10.1016/0022-0248(88)90597-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Very abrupt p-type doping transitions have been realized in GaAs and AlGaAs grown by metalorganic vapor phase epitaxy using bis-(cyclopentadienyl)-magnesium (Cp2Mg) as precursor for the Mg p-dopant. Layers doped to 4×1018 cm-3 and as thin as 50 nm full width at half maximum have been grown under conditions compatible with growth of high quality AlGaAs. Applications for heterostructure bipolar transistor structures are demonstrated.

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页码：646 / 649

页数：4

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