EPITAXY OF GERMANIUM USING GERMANE IN THE PRESENCE OF TETRAMETHYLGERMANIUM

被引：9

作者：

VENKATASUBRAMANIAN, R

PICKETT, RT

TIMMONS, ML

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5662 / 5664

页数：3

共 11 条

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[7]

KOCHI IK, 1978, ORGANOMETALLIC MECHA, P237

[8]

Long L.H., 1961, PURE APPL CHEM, V2, P61

[9] EPITAXIAL DEPOSITION OF GERMANIUM ONTO SEMI-INSULATING GAAS [J].

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[10]

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