DEEP-DEPLETION BREAKDOWN VOLTAGE OF SILICON-DIOXIDE SILICON MOS CAPACITORS

The deep-depletion breakdown voltage of silicon-dioxide/ silicon MOS capacitors is determined by the ionization-integral method, with potential distributions computed by two-dimensional relaxation techniques. Calculations cover the range of substrate doping between 1014 and 1018 cm-3 and oxide thickness between 0.01 and 5.00 µm, providing plots of breakdown voltage versus substrate impurity concentration with oxide thickness as parameter. A universal and normalized criterion is derived for field uniformity in terms of the ratio of oxide Thickness to the maximum (breakdown) width of the silicon depletion region: this ratio should be larger than 0.3 in order not to have field concentration around the edges of the metal plate. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.