UNSTEADY SILICON-NITRIDE CONDUCTIVITY IN HIGH ELECTRIC-FIELDS

被引：12

作者：

GRITSENKO, VA

MEERSON, EE

SINITSA, SP

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 48卷 / 01期

关键词：

D O I：

10.1002/pssa.2210480105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：31 / 37

页数：7

共 18 条

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CARLSON, HG .

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[2] 2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J].

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GRITSENKO, VA ;

SINITSA, SP .

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[3] CONDUCTIVITY OF AMORPHOUS SILICON-NITRIDE IN HIGH ELECTRIC-FIELDS [J].

GRITSENKO, VA ;

MEERSON, EE ;

MOGILNIKOV, KP ;

SINITSA, SP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02) :K167-K170

[4]

GRITSENKO VA, 1976, THESIS SIBIR BRANCH

[5]

GRITSENKO VA, 1976, PROPERTIES STRUCTURE

[6]

GUZEV AA, 1977, MIKROELEKTRONIKA AKA, V6, P33

[7] PROPERTIES OF ALUMINUM OXIDE FILMS OBTAINED FROM NITROUS OXIDE AND ALUMINUM TRIMETHYL [J].

HALL, LH ;

ROBINETTE, WC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) :1624-+

[8]

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[9]

LAMPERT MA, 1974, INJECTION CURRENTS S

[10] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

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