THE EFFECT OF LOW-THERMAL-BUDGET ANNEALS AND FURNACE RAMPS ON THE ELECTRICAL ACTIVATION OF ARSENIC

The electrical activation of arsenic under low-thermal-budget anneals has been studied by annealing high-dose (7 x 10(15) cm-2) arsenic implants under various conditions. It is shown that detailed consideration of the initial electrical activation immediately after damage annealing, as well as the ramp-up and -down conditions, is necessary in order to model the diffusion and electrical activation of the arsenic. The various stages of the annealing process are described, and the cumulative effect of each stage in the cycle on the final degree of electrical activation is discussed in the context of experimental results and dynamics of arsenic clustering and declustering.