ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED N-TYPE SILICON .2. UNIFIED TREATMENT

被引：152

作者：

QUIRT, JD ^{[1
]}

MARKO, JR ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA, DEPT PHYS, VANCOUVER 8, BRITISH COLUMBI, CANADA

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.7.3842

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：3842 / 3858

页数：17

相关论文

共 59 条

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