PHOTOLUMINESCENCE OF POROUS SILICON BURIED UNDERNEATH EPITAXIAL GAP

被引：11

作者：

CAMPBELL, JC ^{[1
]}

TSAI, C ^{[1
]}

LI, KH ^{[1
]}

SARATHY, J ^{[1
]}

SHARPS, PR ^{[1
]}

TIMMONS, ML ^{[1
]}

VENKATASUBRAMANIAN, R ^{[1
]}

HUTCHBY, JA ^{[1
]}

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.106495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recent observations of visible, room-temperature photoluminescence in porous Si have stimulated research aimed at the realization of efficient, Si-based electroluminescent devices. To achieve electroluminescence, it may be beneficial to generate carriers with sufficient energy to populate the states of the quantum-confined Si structures. A viable method to accomplish this is to utilize a wide-band-gap heterojunction injector, such as GaP. Toward that end, we report the successful formation of porous Si buried underneath GaP islands, and we demonstrate that the buried porous Si layer exhibits strong photoluminescence (lambda almost-equal-to 7000 angstrom).

引用

页码：889 / 891

页数：3

共 11 条

[1] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].