A CONTRIBUTION TO DC TRANSPORT IN THIN BI FILMS

被引:3
作者
GERLACH, E
机构
[1] I. Physikalisches Institut, Rheinisch-Westfälischen Technischen Hochschule Aachen
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1990年 / 157卷 / 01期
关键词
D O I
10.1002/pssb.2221570118
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A generalization of the energy‐loss transport concept, which includes carrier–carrier‐scattering, is applied to a thin (two‐dimensional) Bi‐film deposited on an e.g. CaF2‐substrate. In particular, scattering by ions is considered and by charge density fluctuations. An additional scattering channel is taken into account by a scattering frequency ωτ. If the concentrations of electrons and holes are about equal, the resulting resistance of the Bi‐film at not too low temperatures is governed by scattering by fluctuations. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:189 / 198
页数:10
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