MOVPE GROWTH OF GAAS USING A N2 CARRIER

We have studied LP-MOVPE (low pressure metalorganic vapor phase epitaxy) growth of GaAs in a N2 carrier. Growth temperature, gas velocity, reactor pressure and V/111 ratio were varied successively in order to attain an optimum set of growth parameters. Samples with excellent morphology and optical properties comparable to H2 grown samples were obtained. Intentionally Si-doped material with an electron concentration of 5.3 X 10(14) cm-3 showed Hall mobilities of 58,340 and 7530 cm2/V.s at 77 and 300 K, respectively. Growth investigations on SiO2 masked substrates were carried out to test the suitability of the N2 process for selective growth. Selective growth was possible in a large parameter range. Furthermore a set of parameters was developed with which only growth parallel to the (100) substrate surface is observed.