A NOVEL HIGH-VOLTAGE HIGH-SPEED MESFET USING A STANDARD GAAS DIGITAL IC PROCESS

被引：15

作者：

MOK, PKT

SALAMA, CAT

机构：

[1] Univ of Toronto, Toronto, Ont

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 02期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/16.277371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel gallium arsenide high-voltage MESFET structure (HVFET) suitable for high-voltage, high-speed output drivers is described. The device uses an extended drain region and a two-step gate field plate structure to achieve high breakdown voltage of 130 V. The device is implemented using a standard GaAs enhancement/depletion MESFET digital IC process without any additional processing steps and exhibits turn-on and turn-off times under 200 ps.

引用

收藏

页码：246 / 250

页数：5

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