TRAPEZOIDAL-GROOVE SCHOTTKY-GATE VERTICAL-CHANNEL GAAS-FET (GAAS STATIC INDUCTION TRANSISTOR)

被引：8

作者：

CAMPBELL, PM ^{[1
]}

GARWACKI, W ^{[1
]}

SEARS, AR ^{[1
]}

MENDITTO, P ^{[1
]}

BALIGA, BJ ^{[1
]}

机构：

[1] GE,CTR CORP RES,SCHENECTADY,NY 12345

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 06期

关键词：

D O I：

10.1109/EDL.1985.26133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：304 / 306

页数：3

相关论文

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[3] Campbell P. M., 1982, International Electron Devices Meeting. Technical Digest, P258
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 95 - 97
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 185 - 197
[6] SEARS AR, 1983, IEDM TECH DIG, P29
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[J]. SOLID-STATE ELECTRONICS, 1980, 23 (02) : 117 - 119