DEPENDENCE OF MINORITY-CARRIER RECOMBINATION LIFETIME ON SURFACE MICROROUGHNESS IN SILICON-WAFERS

被引：15

作者：

DAIO, H

SHIMURA, F

机构：

[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 12B期

关键词：

MICROROUGHNESS; SILICON WAFERS; LIFETIME MEASUREMENT; LASER MICROWAVE PHOTOCONDUCTANCE TECHNIQUE; ELEVATED TEMPERATURES; SURFACE LIFETIME;

D O I：

10.1143/JJAP.32.L1792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of silicon surface microroughness on the minority-carrier recombination life-time has been studied with a laser/microwave photoconductance technique. By means of an algorithm for separating the surface and bulk components. it has been shown that the microroughness considerably affects the surface recombination velocity, in turn the lifetime, of silicon wafers at elevated temperatures. It is found that the smoother results in the higher lifetime.

引用

页码：L1792 / L1794

页数：3

共 12 条

[1] MICROROUGHNESS MEASUREMENTS ON POLISHED SILICON-WAFERS [J].