ANALYSIS OF MECHANISM FOR RESONANT TUNNELING VIA LOCALIZED STATES IN THIN SIO2-FILMS

被引：4

作者：

GU, B

MANGIANTINI, M

COLUZZA, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.341980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：6867 / 6870

页数：4

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