INSITU SPECTROSCOPIC ELLIPSOMETRY STUDIES OF HYDROGEN-ION BOMBARDMENT OF CRYSTALLINE SILICON

被引：12

作者：

HU, YZ ^{[1
]}

LI, M ^{[1
]}

CONRAD, K ^{[1
]}

ANDREWS, JW ^{[1
]}

IRENE, EA ^{[1
]}

DENKER, M ^{[1
]}

RAY, M ^{[1
]}

MCGUIRE, G ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 03期

关键词：

D O I：

10.1116/1.586086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogen-bombardment induced damage in single crystal silicon as a function of the substrate temperature, ion energy, and ion dose was studied using in situ spectroscopic ellipsometry over the photon energy range 2.0-5.5 eV under high vacuum conditions. The incident hydrogen ion energies were 300 and 1000 eV, and the doses were 10(15)-10(18) ions/cm2. In situ spectroscopic ellipsometry results showed that the damage layer thicknesses for the samples bombarded at elevated temperatures are smaller than for samples bombarded at room temperature and subsequently annealed at the same elevated temperature. The diffusion coefficient for hydrogen in silicon of 6 x 10(-15) cm-2/s was obtained from the in situ spectroscopic ellipsometry data.

引用

页码：1111 / 1117

页数：7

共 39 条

[1]

ANDREWS JW, 1989, SPIE P, V1188, P162

[2] DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1057-1060

[3] STUDIES OF SURFACE, THIN-FILM AND INTERFACE PROPERTIES BY AUTOMATIC SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :289-295

[4] LOCAL-FIELD EFFECTS AND EFFECTIVE-MEDIUM THEORY - A MICROSCOPIC PERSPECTIVE [J].

ASPNES, DE .

AMERICAN JOURNAL OF PHYSICS, 1982, 50 (08) :704-709

[5] AN INVESTIGATION OF ION-BOMBARDED AND ANNEALED (111) SURFACES OF GE BY SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE ;

STUDNA, AA .

SURFACE SCIENCE, 1980, 96 (1-3) :294-306

[6] HIGH PRECISION SCANNING ELLIPSOMETER [J].

ASPNES, DE ;

STUDNA, AA .

APPLIED OPTICS, 1975, 14 (01) :220-228

[7] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE ;

THEETEN, JB .

PHYSICAL REVIEW B, 1979, 20 (08) :3292-3302

[8] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[9] ELLIPSOMETRIC AND RUTHERFORD BACKSCATTERING CHARACTERIZATION OF LOW-ENERGY HYDROGEN-BOMBARDED, HELIUM-BOMBARDED, NEON-BOMBARDED, AND ARGON-BOMBARDED SILICON [J].

BUCKNER, JL ;

VITKAVAGE, DJ ;

IRENE, EA .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) :5288-5294

[10] OPTICAL-MODEL FOR THE ELLIPSOMETRIC CHARACTERIZATION OF LOW-ENERGY ION-BEAM DAMAGE IN SINGLE-CRYSTAL SILICON [J].

BUCKNER, JL ;

VITKAVAGE, DJ ;

IRENE, EA ;

MAYER, TM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) :1729-1733

← 1 2 3 4 →