ARSENIC PRESSURE-DEPENDENCE OF 1ST-ORDER PHASE-TRANSITION ON INAS (001) SURFACE

被引：5

作者：

YAMAGUCHI, H

HORIKOSHI, Y

机构：

[1] NTT Basic Research Laboratories, Atsugi-shi

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 19期

关键词：

D O I：

10.1063/1.111529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of As pressure in the first-order phase transition between As-covered (2X4) and In-covered (4X2) structures on InAs (001) surfaces is investigated using reflection high-energy electron diffraction. The dependence of transition temperatures on As pressure is well explained by Monte Carlo simulation with a two-dimensional lattice gas model, and the interaction energy is quantitatively obtained. The influence of metastability on As desorption is also clarified by comparing the experiments and simulations.

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页码：2572 / 2574

页数：3

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