N-SI/P-SI1-XGEX/N-SI DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：34

作者：

XU, DX

SHEN, GD

WILLANDER, M

NI, WX

HANSSON, GV

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 26期

关键词：

D O I：

10.1063/1.99543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2239 / 2241

页数：3

共 9 条

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[6] THERMAL AND ACCELERATED (LESS-THAN-OR-EQUAL-TO-200 EV) IN DOPING OF SI(100) LAYERS DURING MOLECULAR-BEAM EPITAXY [J].

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[9] CURRENT TRANSPORT IN STRAINED N-SI1-XGEX/P-SI HETEROJUNCTION DIODES [J].

WILLANDER, M ;

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NI, WX .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) :5036-5039

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