TIME EVOLUTION OF CAPTURE CROSS-SECTIONS OF RADIATION-INDUCED SI/SIO2 INTERFACE TRAPS STUDIED BY SINGLE-FREQUENCY AC CONDUCTANCE TECHNIQUE

被引:11
作者
CHEN, WL [1 ]
MA, TP [1 ]
机构
[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
关键词
D O I
10.1063/1.349649
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the time-dependent evolution of the capture cross sections of interface traps in metal/SiO2/Si capacitors after they are created by x-ray irradiation. A single-frequency ac conductance technique was used in this study. The capture cross section decreases significantly right after irradiation, and gradually recovers over a time scale similar to that of the interface-trap transformation process reported previously [T. P. Ma, Semicond. Sci. Technol. 4, 1061 (1989)]. The x-ray dose dependence and the effect of PMA (post-metal anneal) will also be presented.
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页码:860 / 866
页数:7
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