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LASER ANNEALING OF MOS-TRANSISTOR CHANNEL IMPLANTATIONS

被引：3
作者：
ZIMMER, G
机构：
[1] Lehrstuhl Bauelemente der Elektrotechnik, Universität Dortmund, D-4600 Dortmund 50, W. Germany
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 06期
关键词：
Laser applications; Silicon; Transistors;
D O I：
10.1049/el:19790129
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Laser annealing of the implanted gate region of n-channel m.o.s. transistors is described. The threshold shift against dose is measured for laser-annealed and thermally annealed samples. Comparison with theoretical threshold shift shows that laser annealing yields full electrical activation without diffusive redistribution, in contrast to thermal annealing at 960°C. © 1979, The Institution of Electrical Engineers. All rights reserved.
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收藏
页码：184 / 186
页数：3
相关论文
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