DYNAMICS OF A BAND-EDGE TRANSITION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY

被引：39

作者：

SMITH, M

CHEN, GD

LIN, JY

JIANG, HX

SALVADOR, A

SVERDLOV, BN

BOTCHKAREV, A

MORKOC, H

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 25期

关键词：

D O I：

10.1063/1.113768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved photoluminescence spectroscopy has been used to probe the dynamics of optical transitions in GaN epitaxial layers grown by molecular beam epitaxy. In particular, systematic measurements on a band-edge transition at about 3.42 eV have been carried out. Recombination lifetimes of this transition have been measured at different emission energies. Our results clearly show that the time-resolved photoluminescence can provide immense value in the understanding of the dynamic processes of optical transitions in GaN.© 1995 American Institute of Physics.

引用

页码：3474 / 3476

页数：3

共 10 条

[1]

Chen GY, UNPUB

[2] THE INFLUENCE OF OXYGEN ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF GAN CRYSTALS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].