ELECTRON-PARAMAGNETIC-RESONANCE MEASUREMENTS OF SI-DONOR-RELATED LEVELS IN ALXGA1-XAS

被引：53

作者：

MOONEY, PM ^{[1
]}

WILKENING, W ^{[1
]}

KAUFMANN, U ^{[1
]}

KUECH, TF ^{[1
]}

机构：

[1] FRAUNHOFER INST ANGEW FESTKORPER PHYS,D-7800 FREIBURG,FED REP GER

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5554

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5554 / 5557

页数：4

共 21 条

[1] EPR STUDIES ON A1XGA1-XAS MIXED-CRYSTALS [J].

BOTTCHER, R ;

WARTEWIG, S ;

BINDEMANN, R ;

KUHN, G ;

FISCHER, P .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 58 (01) :K23-K26

[2] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[3] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[4]

DMOVHOWSKI JE, 1988, PHYS REV B, V38, P3276

[5]

GLASER E, IN PRESS I PHYSICS C, V95

[6] DETERMINATION OF THE PHOTOIONIZATION THRESHOLD OF THE DEEP DONOR IN AL0.33GA0.67AS-SI - EVIDENCE FOR SMALL LATTICE-RELAXATION [J].

HENNING, JCM ;

ANSEMS, JPM .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (03) :245-247

[7] PHOTOIONIZATION THRESHOLD OF THE DEEP DONOR IN SI-DOPED ALXGA1-XAS [J].

HENNING, JCM ;

ANSEMS, JPM .

PHYSICAL REVIEW B, 1988, 38 (08) :5772-5775

[8]

HENNING JCM, 1988, 15TH P INT C DEF SEM

[9]

KACHATURYAN KA, 1988, 15TH P INT C DEF SEM

[10]

KAUFMANN U, 1988, I PHYSICS C SERIES, V91, P41

← 1 2 3 →