ALGAAS/GAINP HETEROJUNCTION TUNNEL-DIODE FOR CASCADE SOLAR-CELL APPLICATION

被引：29

作者：

JUNG, D ^{[1
]}

PARKER, CA ^{[1
]}

RAMDANI, J ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.354753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A p+-AlGaAs/n+-GaInP heterojunction tunnel diode with band gap E(g) almost-equal-to 1.9 eV was fabricated by the atomic layer epitaxy growth. Doping levels of 1 x 10(20) cm-3 and 5 x 10(19) cm-3 were achieved in the p and n side of the diode using carbon and selenium, respectively. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. For forward current of 20 A/cm2, which is the expected current density at 1000 suns operation, there is only approximately 20 mV voltage drop across the tunnel junction. When annealed at 650 and 750-degrees-C to simulate the growth of the top cell, the diode was still suitable for 1000 suns operation. This is the first reported tunnel diode fabricated in high band-gap material systems that can be used as the connecting junction in the cascade solar cell structure operating at 1000 suns.

引用

页码：2090 / 2093

页数：4

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