共 22 条
[1]
EPITAXIAL INTEGRATION OF SINGLE-CRYSTAL C-60
[J].
APPLIED PHYSICS LETTERS,
1993, 63 (25)
:3443-3445
[2]
FISHER JE, 1993, APPL PHYS A, V56, P193
[3]
C-60 GROWTH ON SI(100), GASE(0001) AND GES(001) - INFLUENCE OF THE SUBSTRATE ON THE FILM CRYSTALLINITY
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1993, 56 (03)
:175-183
[4]
A DOUBLE-TEMPERATURE-GRADIENT TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL FULLERITES FROM THE VAPOR-PHASE
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1993, 56 (03)
:161-167
[5]
DEPOSITION AND CHARACTERIZATION OF FULLERENE FILMS
[J].
APPLIED PHYSICS LETTERS,
1991, 59 (17)
:2109-2111
[6]
HEINEY PA, 1991, PHYS REV LETT, V66, P2991
[8]
Koruga D., 1993, FULLERENE C60 HIST P
[9]
THE GROWTH OF CRYSTALLINE VAPOR-DEPOSITED CARBON-60 THIN-FILMS
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1993, 56 (03)
:185-192