HIGH-PERFORMANCE A-SIGE SOLAR-CELLS USING A SUPER CHAMBER METHOD

被引：5

作者：

HAKU, H

SAYAMA, K

MARUYAMA, E

DOHJOH, H

NAKAMURA, N

TSUDA, S

NAKANO, S

KISHI, Y

KUWANO, Y

机构：

[1] Functional Materials Research Center, SANYO Electric Co. Ltd, Hirakata, Osaka, 573

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11A期

关键词：

A-SIGE; SOLAR CELL; ULTRAHIGH VACUUM; IMPURITY; STM;

D O I：

10.1143/JJAP.30.2700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of impurities on the a-SiGe film properties was investigated using a super chamber. It was found that a-SiGe films with a low impurity concentration can maintain a high photosensitivity of about 10(6) for Ge content up to 13%, and impurity incorporation deteriorates film rigidity, which was first deduced from the STM (scanning tunneling microscope) measurement. Using a super chamber method, the highest conversion efficiency of 3.34% was obtained for an a-SiGe single-junction cell under red light (long-wavelength light (> approximately 650 nm) by filtering AM-1.5, 100 mW/cm2 light). A conversion efficiency of 11.9% was also achieved for a stacked cell of a-Si/a-Si/a-SiGe.

引用

页码：2700 / 2704

页数：5

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