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A SIMPLE 2-DIMENSIONAL MODEL FOR SUBTHRESHOLD CHANNEL-LENGTH MODULATION IN SHORT-CHANNEL MOSFETS

被引：6
作者：
GREEN, KR
FOSSUM, JG
机构：
[1] Department of Electrical Engineering. University of Florida, Gainesville
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 08期
关键词：
D O I：
10.1109/16.223724
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physical yet simple model that describes subthreshold channel-length modulation and its complex relationship with DIBL in short-channel MOSFET's is derived. The underlying quasi-two-dimensional analysis produces a V(DS)-independent value for the modulated channel length in weak inversion, which can be used to simplify and correct subthreshold current simulation. The model, supported by numerical device simulations, further gives insight regarding how channel-length modulation scales with structural parameters.
引用
收藏
页码：1560 / 1563
页数：4
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