TILTED SUPERLATTICE COMPOSITION PROFILE DETERMINED BY PHOTOLUMINESCENCE AND THERMAL DISORDERING

被引：1

作者：

JOHNSON, FG ^{[1
]}

OLMSTED, BL ^{[1
]}

CHEN, S ^{[1
]}

WICKS, GW ^{[1
]}

机构：

[1] EASTMAN KODAK CO, CORP RES LABS, ROCHESTER, NY 14650 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 03期

关键词：

MOLECULAR BEAM EPITAXY AND TILTED SUPERLATTICE;

D O I：

10.1007/BF02661386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The composition profile of an (AlAs)1/2(GaAs)1/2 tilted superlattice is characterized for the first time. The tilted superlattice sample is thermally disordered, and the energy of the direct band gap photoluminescence peak is measured as a function of increasing layer interdiffusion. The shift in the photoluminescence peak energy after completely disordering the tilted superlattice is 39 meV. A theoretical model is used to simulate the change in band gap as a function of layer interdiffusion for several composition profiles. The profile that gives the best fit to the experimental data is chosen. The tilted superlattice composition profile is found to be sinusoidal, varying from Al0.40Ga0.60As to Al0.60Ga0.40As.

引用

页码：331 / 334

页数：4

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