EXPERIMENTAL-STUDY OF INGAAS-INP MQW ELECTRO-ABSORPTION MODULATORS

[11] EXCITON ELECTROABSORPTION AT ROOM-TEMPERATURE IN INGAAS/INP MULTIQUANTUM-WELL STRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOCVD [J]. ELECTRONICS LETTERS, 1987, 23 (10) : 516 - 518

[12] FIELD-INDUCED ENERGY SHIFT OF EXCITONIC ABSORPTION IN INGAAS INP MULTIQUANTUM WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (11): : 1927 - 1928

[13] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 164 - 166

[14] INGAAS-INP MULTIPLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 24 - 26

[15] SUEMATSU Y, 1982, GAINASP ALLOY SEMICO

[16] STARK SHIFTS IN GAAS/GAALAS QUANTUM-WELLS STUDIED BY PHOTOLUMINESCENCE SPECTROSCOPY [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (18): : 2803 - 2815

[17] STRONG POLARIZATION-SENSITIVE ELECTROABSORPTION IN GAAS/ALGAAS QUANTUM WELL WAVE-GUIDES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1148 - 1150

[18] QUANTUM CONFINED STARK SHIFTS IN MOVPE-GROWN GAAS-ALGAAS MULTIPLE QUANTUM-WELLS [J]. ELECTRONICS LETTERS, 1987, 23 (20) : 1048 - 1050

[19] WHITEHEAD M, 1988, APPL PHYS LETT, V52

[20] LARGE ELECTROABSORPTION EFFECT IN GAINAS/INP MULTIPLE QUANTUM WELL (MQW) OPTICAL MODULATOR GROWN BY OMVPE [J]. ELECTRONICS LETTERS, 1988, 24 (14) : 840 - 841

[11] EXCITON ELECTROABSORPTION AT ROOM-TEMPERATURE IN INGAAS/INP MULTIQUANTUM-WELL STRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOCVD [J]. ELECTRONICS LETTERS, 1987, 23 (10) : 516 - 518

[12] FIELD-INDUCED ENERGY SHIFT OF EXCITONIC ABSORPTION IN INGAAS INP MULTIQUANTUM WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (11): : 1927 - 1928

[13] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 164 - 166

[14] INGAAS-INP MULTIPLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 24 - 26

[15] SUEMATSU Y, 1982, GAINASP ALLOY SEMICO

[16] STARK SHIFTS IN GAAS/GAALAS QUANTUM-WELLS STUDIED BY PHOTOLUMINESCENCE SPECTROSCOPY [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (18): : 2803 - 2815

[17] STRONG POLARIZATION-SENSITIVE ELECTROABSORPTION IN GAAS/ALGAAS QUANTUM WELL WAVE-GUIDES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1148 - 1150

[18] QUANTUM CONFINED STARK SHIFTS IN MOVPE-GROWN GAAS-ALGAAS MULTIPLE QUANTUM-WELLS [J]. ELECTRONICS LETTERS, 1987, 23 (20) : 1048 - 1050

[19] WHITEHEAD M, 1988, APPL PHYS LETT, V52

[20] LARGE ELECTROABSORPTION EFFECT IN GAINAS/INP MULTIPLE QUANTUM WELL (MQW) OPTICAL MODULATOR GROWN BY OMVPE [J]. ELECTRONICS LETTERS, 1988, 24 (14) : 840 - 841