ETALON ENHANCEMENT OF NONLINEAR OPTICAL-RESPONSE IN BI1-XSBX

被引：5

作者：

YOUNGDALE, ER ^{[1
]}

MEYER, JR ^{[1
]}

HOFFMAN, CA ^{[1
]}

BARTOLI, FJ ^{[1
]}

PARTIN, DL ^{[1
]}

THRUSH, CM ^{[1
]}

HEREMANS, JP ^{[1
]}

机构：

[1] GM CORP,RES LABS,DEPT PHYS,WARREN,MI 48090

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 07期

关键词：

D O I：

10.1063/1.105333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of the nondegenerate four-wave mixing of CO2 laser beams in a Bi(1-x)Sb(x) film have yielded the largest high-power third-order nonlinear susceptibilities ever reported at that wavelength (chi(3) > 6 X 10(-4) esu at P0 > 2 X 10(5) W/cm2). Furthermore, an etalon effect resulting from the high reflectivity of the Bi(1-x)Sb(x) films at both the air and substrate interfaces leads to an additional enhancement of the four-wave signal by as much as a factor of 30. A theoretical model based on optical modulation of the free-carrier susceptibility gives results which are in excellent agreement with the data.

引用

页码：756 / 758

页数：3

共 12 条

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