ENHANCED ZN DIFFUSION IN GAAS PNPN STRUCTURES - GROWTH VERSUS ANNEALING

被引：9

作者：

CHEN, CY ^{[1
]}

COHEN, RM ^{[1
]}

SIMONS, DS ^{[1
]}

CHI, PH ^{[1
]}

机构：

[1] NIST, CHEM SCI & TECHNOL LAB, GAITHERSBURG, MD 20899 USA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 10期

关键词：

D O I：

10.1063/1.114507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn diffusivity, D-Zn in heavily doped pnpn GaAs structures has been measured after growth and annealing. During growth at 650 degrees C, D-Zn similar to 10(-12) cm(2)/s in the buried p-type layer is found to be >10(4) X D-Zn in the top p-type layer. During annealing at 800 degrees C, D(Zn)approximate to 5 X 10(-14) cm(2)/s in the buried layer remains orders of magnitude larger than D-Zn in the top layer. The measurements provide clear experimental evidence that (1) a large flux of Ga interstitials, I-Ga, is injected from the surface during the growth of n-type layers, (2) the I-Ga are trapped in the buried p-type layer by the electric field of the pn junctions, and are thus positively charged, (3) the resulting large concentration of I-Ga in the buried layer accounts for the enhanced D-Zn via a kick-out mechanism, and (4) the mobile Zn interstitial is positively charged. (C) 1995 American Institute of Physics.

引用

页码：1402 / 1404

页数：3

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