GAP-STATE DISTRIBUTION IN A-SI H BY MODULATED PHOTOCURRENT - SHALLOW-STATE-DEEP-STATE CONVERSION AND TEMPERATURE SHIFT OF THE ELECTRON-TRANSPORT PATH

被引:16
作者
SCHUMM, G
NITSCH, K
BAUER, GH
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1988年 / 58卷 / 04期
关键词
D O I
10.1080/13642818808218383
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:411 / 420
页数:10
相关论文
共 20 条
[1]   ELECTRONIC CORRELATIONS AND TRANSIENT EFFECTS IN DISORDERED-SYSTEMS [J].
ADLER, D .
SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :53-69
[2]   DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J].
ADLER, D .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :3-14
[3]  
COHEN JD, 1984, SEMICONDUCT SEMIMET, V21, P9
[4]   PHOTOINDUCED CHANGES IN GLOW-DISCHARGE-DEPOSITED AMORPHOUS SILICON - STAEBLER-WRONSKI EFFECT [J].
ELLIOTT, SR .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (04) :349-356
[5]   DEFECT STATES IN AMORPHOUS SILICON [J].
ELLIOTT, SR .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :325-334
[6]   ACTIVATED TRANSPORT IN AMORPHOUS-SEMICONDUCTORS .2. INTERPRETATION OF EXPERIMENTAL-DATA [J].
FENZ, P ;
MULLER, H ;
OVERHOF, H ;
THOMAS, P .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (16) :3191-3199
[7]  
Jonscher AK., 1983, DIELECTRIC RELAXATIO
[8]  
LI RL, 1987, SEMICOND SCI TECHNOL, V2, P233
[9]   COMMENTS ON THE CALCULATION OF THE EXTENDED STATE ELECTRON-MOBILITY IN AMORPHOUS-SILICON [J].
MARSHALL, JM ;
LECOMBER, PG ;
SPEAR, WE .
SOLID STATE COMMUNICATIONS, 1985, 54 (01) :11-14
[10]   TRANSITION FROM DIFFUSIVE TO BALLISTIC CAPTURE RELATED TO HYDROGEN INCORPORATION IN AMORPHOUS-SILICON [J].
MENCARAGLIA, D ;
KLEIDER, JP .
PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (02) :63-68