A SIMPLE ELECTRICAL METHOD TO DETERMINE THE SI AND OXIDE THICKNESSES IN SOI MATERIALS

被引：4

作者：

VU, DP

ZAVRACKY, PM

BODEN, MJ

CHEONG, NK

机构：

[1] Kopin Corporation, Taunton

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 08期

关键词：

D O I：

10.1109/55.119154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show how the thicknesses of the silicon and oxide layers of an SOI structure can be determined from high-frequency capacitance-voltage measurements of a Schottky diode formed on SOI material. This simple test device can be implemented as a process monitor for silicon thickness control.

引用

页码：427 / 429

页数：3

共 6 条

[1] CAPACITANCE-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) STRUCTURE [J].