A COMPARISON OF DIFFERENT METHODS FOR REMOVAL OF DAMAGE CAUSED BY REACTIVE SPUTTER ETCHING OF SILICON

被引：15

作者：

OSTLING, M

PETERSSON, CS

NORSTROM, H

BUCHTA, R

BLOM, HO

机构：

[1] UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN

[2] INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 02期

关键词：

D O I：

10.1116/1.583953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：586 / 589

页数：4

共 17 条

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[3]

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[7]

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[8]

FRIESER RG, 1983, J ELECTROCHEM SOC, V130, P2239

[9] ELECTRICAL DEFECTS IN SILICON INTRODUCED BY SPUTTERING AND SPUTTER-ETCHING [J].

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ANDERSSON, LP .

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[10] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J].

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BRUNNSCHWEILER, A .

SOLID-STATE ELECTRONICS, 1976, 19 (01) :47-50

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