ELECTRICAL-PROPERTIES OF LI-DOPED HG1-XCDXTE(100) BY MOLECULAR-BEAM EPITAXY

被引：26

作者：

WIJEWARNASURIYA, PS

SOU, IK

KIM, YJ

MAHAVADI, KK

SIVANANTHAN, S

BOUKERCHE, M

FAURIE, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 24期

关键词：

D O I：

10.1063/1.98281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2025 / 2027

页数：3

共 11 条

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