EFFECT OF ION-BOMBARDMENT ON THE GROWTH AND PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS

被引：41

作者：

PERRIN, J ^{[1
]}

TAKEDA, Y ^{[1
]}

HIRANO, N ^{[1
]}

MATSUURA, H ^{[1
]}

MATSUDA, A ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 01期

关键词：

D O I：

10.1143/JJAP.28.5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5 / 11

页数：7

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[6] GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA [J].

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[8] ION-BOMBARDMENT EFFECT ON THE GROWTH OF A-SI-H FILMS DEPOSITED FROM A PURE SILANE PLASMA [J].

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