DISSOCIATIVE NH3 ADSORPTION ON THE SI(100)2X1 SURFACE AT 300-K

被引：65

作者：

LARSSON, CUS

FLODSTROM, AS

机构：

[1] Materials Science, Royal Institute of Technology

来源：

SURFACE SCIENCE | 1991年 / 241卷 / 03期

关键词：

D O I：

10.1016/0039-6028(91)90095-A

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High resolution electron energy loss spectroscopy has been used to determine how NH3 adsorbs on the Si(100)2 x 1 surface at 300 K. We find that the NH3 molecules dissociate into NH2 and H on adsorption. Combination bands, overtones and double losses for the Si-NH2 group are observed. An anneal to 800 K is sufficient to dissociate the adsorbed NH2 groups while the majority of the Si-H bonds remain intact. An anneal to 1100 K is enough to break the Si-H bonds and start the formation of silicon nitride.

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页码：353 / 356

页数：4

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