A COMMENT ON THERMAL DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON

被引：14

作者：

STUTZMANN, M

机构：

[1] Max-Planck-Institut fur Festkorperforschung, Stuttgart, W-7000

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1992年 / 66卷 / 03期

关键词：

D O I：

10.1080/09500839208229277

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The theoretical modelling of the temperature-dependent metastable dangling-bond density in undoped hydrogenated amorphous silicon (a-Si:H) is critically reviewed. It is shown that thermal broadening of the band tails provides the main contribution to the observed increase in the deep-defect density in a-Si:H with increasing temperature. The possible structural origins of this phenomenon are briefly discussed.

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页码：147 / 150

页数：4

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