SHORT-RANGE ORDER, MICROSTRUCTURE AND THEIR CORRELATION WITH LIGHT-INDUCED DEGRADATION IN HYDROGENATED AMORPHOUS-SILICON DEPOSITED AT HIGH GROWTH-RATES BY CATHODE HEATING TECHNIQUE

被引：16

作者：

CHATTOPADHYAY, S

SHARMA, SN

BANERJEE, R

BHUSARI, DM

KSHIRSAGAR, ST

CHEN, Y

WILLIAMSON, DL

机构：

[1] NATL CHEM LAB,POONA 411008,MAHARASHTRA,INDIA

[2] COLORADO SCH MINES,DEPT PHYS,GOLDEN,CO 80401

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.357239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon (a-Si:H) films were deposited at high growth rates by increasing the rf power density in a (SiH4+H-2) discharge, while powder formation due to gas phase polymerization was controlled by heating the cathode together with the anode. A combination of Raman scattering, infrared absorption, and small angle x-ray scattering experiments was used to study the short-range order and microstructure of films deposited in different (dusty or otherwise) plasma conditions. The results were correlated with initial and light-soaked photoresponse to demonstrate that films with more microstructure and less short-range order were generally poorer.

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页码：5208 / 5213

页数：6

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