DOPANT-ATOM-INDUCED DISORDER IN HYDROGENATED AMORPHOUS-SILICON - RAMAN STUDIES

被引：27

作者：

KSHIRSAGAR, ST ^{[1
]}

DUSANE, RO ^{[1
]}

BHIDE, VG ^{[1
]}

机构：

[1] UNIV POONA,SCH ENERGY STUDIES,POONA 411007,MAHARASHTRA,INDIA

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.40.8026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8026 / 8029

页数：4

共 26 条

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