FABRICATION OF GAINAS/INP QUANTUM WIRES BY ORGANOMETALLIC-VAPOR-PHASE-EPITAXIAL (OMVPE) SELECTIVE GROWTH ON GROOVED SIDE WALLS OF ULTRAFINE MULTILAYERS

被引：5

作者：

KOMORI, K

HAMANO, A

ARAI, S

MIYAMOTO, Y

SUEMATSU, Y

机构：

[1] Tokyo Institute of Technology, Tokyo, 152, 2-12-1 O-okayama, Meguro-ku

[2] Tokyo Institute of Technology, Tokyo, 152, 2-12-1 O-okayama, Meguro-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 5A期

关键词：

QUANTUM WIRES; QUANTUM BOXES; GAINAS (P)/INP; SELECTIVE GROWTH; OMVPE;

D O I：

10.1143/JJAP.31.L535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new fabrication method for high-density and small-size quantum-wire and quantum-box structures is proposed and demonstrated. Using this method, we realized GaInAs/InP quantum wires with very small size (6 nm x 16 nm) and high density and observed room temperature photoluminescence.

引用

页码：L535 / L538

页数：4

共 13 条

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