HOLE-CAPTURE PROPERTIES OF THE ELECTRON-IRRADIATION-INDUCED DEEP-LEVEL H-5 IN P-TYPE INP - A CHARGE-CONTROLLED BISTABLE MODEL

被引：9

作者：

BRETAGNON, T

BASTIDE, G

ROUZEYRE, M

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.40.3749

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3749 / 3755

页数：7

共 18 条

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