ROOM-TEMPERATURE EXCITON ABSORPTION ENGINEERING IN II-VI QUANTUM-WELLS

被引：36

作者：

PELEKANOS, NT

HAAS, H

MAGNEA, N

MARIETTE, H

WASIELA, A

机构：

[1] Laboratoire de Spectrométrie Physique, CNRS, Université J. Fourier

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 26期

关键词：

D O I：

10.1063/1.107992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observe large room-temperature exciton absorption in the wavelength region around 0.8 mum in CdTe-based quantum wells. This comes as a result of a room-temperature exciton engineering concept particularly suitable for II-VI quantum wells where, by appropriate quantum-well confinement, the exciton binding energy approaches and exceeds the LO phonon energy. This condition results in a drastic reduction of the exciton-LO phonon coupling. As a consequence, the temperature-induced exciton broadening, due to scattering events with LO phonons, is reduced and large excitonic absorption is observed at room temperature.

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页码：3154 / 3156

页数：3

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