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OPTICALLY DETECTED MAGNETIC-RESONANCE OF DEEP CENTERS IN MOLECULAR-BEAM EPITAXY ZNSE-N

被引：41
作者：
MURDIN, BN
CAVENETT, BC
PIDGEON, CR
SIMPSON, J
HAUKSSON, I
PRIOR, KA
机构：
[1] Department of Physics, Heriot-Watt University, Edinburgh
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 17期
关键词：
D O I：
10.1063/1.110491
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optically detected magnetic resonance has been used to investigate the deep level recombination processes in p-type ZnSe grown by molecular beam epitaxy and doped with nitrogen. In addition to the well-known shallow donor resonance at g = 1.11, an anisotropic deep donor resonance is observed with g = 1.38 and a deep acceptor resonance is detected at g = 2. These results are consistent with the pair recombination processes proposed by us previously where the compensating deep donor was assigned to the V(Se)-Zn-N(Se) complex.
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页码：2411 / 2413
页数：3
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