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CONFIRMATION OF P-TYPE CONDUCTION IN LI-DOPED ZNSE LAYERS GROWN ON GAAS SUBSTRATES

被引：19
作者：
YAHATA, A
MITSUHASHI, H
HIRAHARA, K
BEPPU, T
机构：
[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 01期
关键词：
Blue LEDs; GaAs; Hall effect measurements; Li; MOCVD; P-type; ZnSe;
D O I：
10.1143/JJAP.29.L4
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hall effect measurements were carried out for Li-doped MOCVD ZnSe layers whose GaAs substrates were removed. This made it possible to obtain the original p-type properties for the layers. Hole concentration, Hall mobility and specific resistivity were 4.1×1016cm-3, 24 cm2/V ·s and 6.4 Ω·cm, respectively. Furthermore, the characteristics for the GaAs inversion layers, which were changed from semi-insulating to p-type by Zn diffusion from the ZnSe layers, were estimated by comparing the results of samples without GaAs substrates with those with GaAs substrates. © 1990 IOP Publishing Ltd.
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页码：L4 / L6
页数：3
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