TRACE-ANALYTICAL METHODS FOR MONITORING CONTAMINATIONS IN SEMICONDUCTOR-GRADE SI MANUFACTURING

被引:32
作者
FABRY, L
PAHLKE, S
KOTZ, L
TOLG, G
机构
[1] INST SPEKTROCHEM & ANGEW SPEKT, D-44139 DORTMUND, GERMANY
[2] MAX PLANCK INST MET RES, REINSTSTOFFANALYT LAB, D-70174 STUTTGART, GERMANY
来源
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1994年 / 349卷 / 04期
关键词
D O I
10.1007/BF00323201
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Generating systematic data on incoming materials, processes, production environments and products by contamination monitoring and analyis is the key element of quality assurance in semiconductor fabrication. To be able to match the analytical capabilities to the requirements of improving materials and processes, the level of sophistication of contamination monitoring and analysis systems must be higher than the expected demands in the fabrication line. The accuracy of each analytical method has to be cross-checked by different independent techniques. Accuracy, precision, power of detection, analysis time and expenses should always be tailored to the particular case. All monitoring methods must run under statistical process control. The methods described meet the analytical requirements of the near future in semiconductor grade silicon manufacturing.
引用
收藏
页码:260 / 271
页数:12
相关论文
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