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SPATIAL-MAPPING OF ELECTRICALLY ACTIVE DEFECTS IN HGCDTE USING LASER BEAM-INDUCED CURRENT
被引:55
作者
:
BAJAJ, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
BAJAJ, J
[
1
]
BUBULAC, LO
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
BUBULAC, LO
[
1
]
NEWMAN, PR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
NEWMAN, PR
[
1
]
TENNANT, WE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
TENNANT, WE
[
1
]
RACCAH, PM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
RACCAH, PM
[
1
]
机构
:
[1]
UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
|
1987年
/ 5卷
/ 05期
关键词
:
D O I
:
10.1116/1.574834
中图分类号
:
TB3 [工程材料学];
学科分类号
:
0805 ;
080502 ;
摘要
:
引用
收藏
页码:3186 / 3189
页数:4
相关论文
共 7 条
[1]
ION-IMPLANTATION STUDY OF HGCDTE
[J].
BUBULAC, LO
论文数:
0
引用数:
0
h-index:
0
BUBULAC, LO
;
TENNANT, WE
论文数:
0
引用数:
0
h-index:
0
TENNANT, WE
;
SHIN, SH
论文数:
0
引用数:
0
h-index:
0
SHIN, SH
;
WANG, CC
论文数:
0
引用数:
0
h-index:
0
WANG, CC
;
LANIR, M
论文数:
0
引用数:
0
h-index:
0
LANIR, M
;
GERTNER, ER
论文数:
0
引用数:
0
h-index:
0
GERTNER, ER
;
MARSHALL, ED
论文数:
0
引用数:
0
h-index:
0
MARSHALL, ED
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
:495
-500
[2]
BUBULAC LO, UNPUB APPL PHYS LETT
[3]
HYDROGENATION INDUCED IMPROVEMENT IN ELECTRONIC-PROPERTIES OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE
[J].
JASTRZEBSKI, L
论文数:
0
引用数:
0
h-index:
0
JASTRZEBSKI, L
;
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
LAGOWSKI, J
;
CULLEN, GW
论文数:
0
引用数:
0
h-index:
0
CULLEN, GW
;
PANKOVE, JI
论文数:
0
引用数:
0
h-index:
0
PANKOVE, JI
.
APPLIED PHYSICS LETTERS,
1982,
40
(08)
:713
-716
[4]
MICROSCALE CHARACTERIZATION OF HETERO-EPITAXIAL SILICON ON SAPPHIRE BY SCANNING PHOTO-VOLTAGE MEASUREMENTS
[J].
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
RCA CORP LABS,PRINCETON,NJ 08540
LAGOWSKI, J
;
JASTRZEBSKI, L
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
RCA CORP LABS,PRINCETON,NJ 08540
JASTRZEBSKI, L
;
CULLEN, GW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
RCA CORP LABS,PRINCETON,NJ 08540
CULLEN, GW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(11)
:2609
-2613
[5]
ELECTRONIC CHARACTERIZATION OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY
[J].
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
LAGOWSKI, J
;
JASTRZEBSKI, L
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
JASTRZEBSKI, L
;
CULLEN, GW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
CULLEN, GW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(12)
:2665
-2670
[6]
EVALUATION OF THE HOMOGENEITY OF GERMANIUM SINGLE CRYSTALS BY PHOTOVOLTAIC SCANNING
[J].
OROSHNIK, J
论文数:
0
引用数:
0
h-index:
0
OROSHNIK, J
;
MANY, A
论文数:
0
引用数:
0
h-index:
0
MANY, A
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1959,
106
(04)
:360
-362
[7]
PALKUTI LJ, 1985, ARACOR FR853511 REP
←
1
→
共 7 条
[1]
ION-IMPLANTATION STUDY OF HGCDTE
[J].
BUBULAC, LO
论文数:
0
引用数:
0
h-index:
0
BUBULAC, LO
;
TENNANT, WE
论文数:
0
引用数:
0
h-index:
0
TENNANT, WE
;
SHIN, SH
论文数:
0
引用数:
0
h-index:
0
SHIN, SH
;
WANG, CC
论文数:
0
引用数:
0
h-index:
0
WANG, CC
;
LANIR, M
论文数:
0
引用数:
0
h-index:
0
LANIR, M
;
GERTNER, ER
论文数:
0
引用数:
0
h-index:
0
GERTNER, ER
;
MARSHALL, ED
论文数:
0
引用数:
0
h-index:
0
MARSHALL, ED
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
:495
-500
[2]
BUBULAC LO, UNPUB APPL PHYS LETT
[3]
HYDROGENATION INDUCED IMPROVEMENT IN ELECTRONIC-PROPERTIES OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE
[J].
JASTRZEBSKI, L
论文数:
0
引用数:
0
h-index:
0
JASTRZEBSKI, L
;
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
LAGOWSKI, J
;
CULLEN, GW
论文数:
0
引用数:
0
h-index:
0
CULLEN, GW
;
PANKOVE, JI
论文数:
0
引用数:
0
h-index:
0
PANKOVE, JI
.
APPLIED PHYSICS LETTERS,
1982,
40
(08)
:713
-716
[4]
MICROSCALE CHARACTERIZATION OF HETERO-EPITAXIAL SILICON ON SAPPHIRE BY SCANNING PHOTO-VOLTAGE MEASUREMENTS
[J].
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
RCA CORP LABS,PRINCETON,NJ 08540
LAGOWSKI, J
;
JASTRZEBSKI, L
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
RCA CORP LABS,PRINCETON,NJ 08540
JASTRZEBSKI, L
;
CULLEN, GW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
RCA CORP LABS,PRINCETON,NJ 08540
CULLEN, GW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(11)
:2609
-2613
[5]
ELECTRONIC CHARACTERIZATION OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY
[J].
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
LAGOWSKI, J
;
JASTRZEBSKI, L
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
JASTRZEBSKI, L
;
CULLEN, GW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
CULLEN, GW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(12)
:2665
-2670
[6]
EVALUATION OF THE HOMOGENEITY OF GERMANIUM SINGLE CRYSTALS BY PHOTOVOLTAIC SCANNING
[J].
OROSHNIK, J
论文数:
0
引用数:
0
h-index:
0
OROSHNIK, J
;
MANY, A
论文数:
0
引用数:
0
h-index:
0
MANY, A
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1959,
106
(04)
:360
-362
[7]
PALKUTI LJ, 1985, ARACOR FR853511 REP
←
1
→